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  5 kv, 7 - channel, spisolator digital isolators for spi data sheet adum4151 / adum4152 / adum4153 features supports up to 17 mhz spi clock speed 4 high speed, low propagation delay, spi signal isolation channels three 250 kbps data channels 20- lead s oic_ic package with 8.3 mm creepage high temperature operation: 125c high common - mode transient immun ity: >25 kv/s safety and regulatory approvals ul recognition per ul 1577 5000 v rms for 1 minute soic long package csa component acceptance notice 5a vde certificate of conform ity din v vde v 0884 - 10 (vde v 0884 - 10):2006 - 12 maximum working insulation voltage ( v iorm ): 849 v peak applications industrial programmable logic controllers ( plc s) sensor i solation general description t he adum415 1 / adum415 2 / adum415 3 1 are 7 - channel , spisolator? digital isolator s optimized for isolated serial peripheral interface s ( spi s ) . based on the analog devices, inc., i coupler? chip scale transformer technology, the low propagation delay in the clk, mo / si , mi / so , and ss spi bus signals support s spi clock rates of up to 17 mhz. these channels operate with 1 4 n s propagation delay and 1 n s jitter to optimize timing for spi. the adum4151 / adum4152 / adum4153 isolators also provide three additional independent low data rate isolation channels in three different channel direction combinations. data in the slow channels is sampled and serialized for a 250 k bps data rate with up to 2.5 s of jitter in the low speed channels . functional block dia grams encode control block decode decode encode encode decode encode decode v dd1 gnd 1 mclk mo mi mss v ia v ib v oc v dd2 gnd 2 sclk si so sss v oa v ob v ic 1 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 gnd 1 gnd 2 9 10 12 11 adum4151 control block 12370-001 figure 1. adum415 1 func tional block diagram encode decode decode encode encode decode encode decode v dd1 gnd 1 mclk mo mi mss v ia v ob v oc v dd2 gnd 2 sclk si so sss v oa v ib v ic 1 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 gnd 1 gnd 2 9 10 12 11 adum4152 control block control block 12370-002 figure 2. adum415 2 functional block diagram encode decode decode encode encode decode encode decode v dd1 gnd 1 mclk mo mi mss v o a v ob v oc v dd2 gnd 2 sclk si so sss v i a v ib v ic 1 2 3 4 5 6 7 8 20 19 18 17 16 15 14 13 gnd 1 gnd 2 9 10 12 11 adum4153 control block control block 12370-003 figure 3. adum415 3 functional block diagram 1 protected by u.s. patents 5,952,849; 6,873,065; 6,262,600; and 7,075,329. other patents are pending. rev. a document feedback information furnished by analog devices is believed to be accurate and reliable. however , no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or other wise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 2014 C 2015 analog devices, inc. all rights reserved. technical support www.analog.com
adum4151/adum4152/adum4153 data sheet table of contents features .............................................................................................. 1 applications ....................................................................................... 1 general description ......................................................................... 1 functional block diagrams ............................................................. 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 electrical characteristics 5 v ope ration ................................ 3 electrical characteristics 3.3 v operation ............................ 5 electrical characteristics mixed 5 v/3.3 v operation ........ 7 electrical characteristics mixed 3.3 v/5 v operation ........ 9 package characteristics ............................................................. 10 r egulatory information ............................................................. 11 insulation and safety related specifications .......................... 11 din v vde v 0884 - 10 (vde v 0884 - 10): 2006 - 12 insulation characteristics .......................................................... 12 recommended operating conditions .................................... 12 absolute maximum ratings ......................................................... 13 esd caution ................................................................................ 13 pin configurations and function descriptions ......................... 14 typical performance characteristics ........................................... 17 applications information .............................................................. 18 introduction ................................................................................ 18 printed circuit board (pcb ) layout ....................................... 19 propagation delay related parameters ................................... 19 dc correctness and magnetic field immunity ..................... 19 power consumption .................................................................. 20 insulation lifetime ..................................................................... 20 outline dimensions ....................................................................... 22 ordering guide .......................................................................... 22 revision history 3 / 15 rev. 0 to rev. a changes to features section ............................................................ 1 changes to t able 2 ............................................................................ 3 changes to table 5 ............................................................................ 5 changes to table 8 ............................................................................ 7 changes to table 11 .......................................................................... 9 changes to ta ble 14 ........................................................................ 11 changes to table 16 ........................................................................ 12 changes to high speed channels section .................................. 18 10 /14 revision 0 : initial version rev. a | page 2 of 22
data sheet adum4151/adum4152/adum4153 specifications electrical character istics 5 v operation all typical specifications are at t a = 25 c and v dd1 = v dd2 = 5 v. minimum and maximum sp ecifications apply over the entire recommended operation range: 4.5 v v dd1 5.5 v, 4.5 v v dd2 5.5 v, and ? 40 c t a + 1 2 5 c , unless otherwise noted. switching specifications are tested with c l = 15 pf and cmos signal levels , unless otherwise noted. table 1 . switching spec i fications parameter symbol a grade b grade unit test conditions /comments min typ max min typ max mclk, mo, so spi clock rate spi mclk 1 17 mhz data rate fast ( mo, so ) dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 25 12 14 ns 50% input to 50% output pulse width pw 100 12.5 ns within pwd limit pulse width distortion pwd 3 2 ns |t plh ? t phl | codirectional channel matching 1 t pskcd 3 2 ns jitter , high speed j hs 1 1 ns mss data rate fast dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 21 25 21 25 ns 50% input to 50% output pu lse width pw 1 00 12.5 ns within pwd limit pulse width distortion pwd 3 3 ns |t plh ? t phl | setup time 2 mss setup 1.5 10 ns jitter, high speed j hs 1 1 ns v ia , v ib , v ic data rate slow dr slow 250 250 kbps wi thin pwd limit propagation delay t phl , t plh 0.1 2.6 0.1 2.6 s 50% input to 50% output pulse width pw 4 4 s within pwd limit jitter, low speed j ls 2.5 2.5 s v ix 3 minimum input skew 4 t vix skew 3 10 10 ns 1 codirectional channel matching is t he absolute value of the difference in propagation delays between any two channels with inputs on the same side of the isolat ion barrier. 2 the mss signal is glitch filtered in both speed grades, whereas the other fast signals are not gl itch filtered in the b grade. to guarantee that mss reaches the output ahead of another fast signal, set up mss prior to the competing signal by different times depending on speed grade. 3 v ix = v ia , v ib , or v ic . 4 an in ternal asynchronous clock not available to users samples the low speed signals. if edge sequence in codirectional channels is critical to the end application, the leading pulse must be at least 1 t vix skew time ahead of a later pulse to guarantee the corre ct order or simultaneous arrival at the output. table 2 . supply current device number symbol 1 m hz , a grade 17 m hz , b grade unit test conditions /comments min typ max min typ max adu m415 1 i dd1 4. 0 8.5 14.0 22 ma c l = 0 pf, l ow speed channels i dd2 6.0 11 13.5 23 ma c l = 0 pf, low speed channels adum415 2 i dd1 4.8 8.5 14.0 21.5 ma c l = 0 p f, low speed channels i dd2 6.5 10.5 14.0 22.5 ma c l = 0 pf, low speed channels adum415 3 i dd1 4.0 8.5 14.0 22 ma c l = 0 pf, low speed channels i dd2 6.0 10.5 13.3 21 ma c l = 0 pf, low speed channels rev. a | page 3 of 22
adum4151/adum4152/adum4153 data sheet table 3 . for all models 1, 2, 3 parameter symbol min typ max unit test conditions /comments dc specifications mcl k , mss , mo, so, v ia , v ib , v ic logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v input hysteresis v ihyst 500 mv input current per channel i i ?1 +0.01 +1 a 0 v v i nput v ddx sclk, sss , mi, si, v oa , v ob , v oc logic high output voltages v oh v ddx ? 0.1 5.0 v i output = ?20 a, v input = v ih v ddx ? 0.4 4.8 v i output = ?4 ma, v input = v ih logic low output voltages v o l 0.0 0.1 v i output = 20 a, v input = v il 0.2 0.4 v i output = 4 ma, v input = v il v dd1 , v dd2 undervoltage lockout uvlo 2.6 v supply current per h igh s peed channel dynamic input supply current i ddi(d) 0.080 ma/mbps dynamic output suppl y current i ddo(d) 0.046 ma/mbps supply current for all low speed channels quiescent side 1 current i dd1(q) 4.3 ma quiescent side 2 current i dd2q) 6.1 ma ac specifications output rise / fall time t r /t f 2.5 ns 10% to 90% common -mo de transient immunity 4 |cm| 25 35 kv/s v i nput = v dd x , v cm = 1000 v , transient magnitude = 800 v 1 v ddx = v dd1 or v dd2 . 2 v input is the input voltage of any of the mclk, mss , mo, so, v ia , v ib , or v ic pins. 3 i output is the output current of any of the sclk, sss , mi, si , v oa , v ob , or v oc pins. 4 |cm| is the maximum common - mode voltage slew rate that can be sustained while maintaining output voltages within the v oh and v ol limits . the common - mode voltage slew rates apply to both rising and falling common - mode voltage edge s. rev. a | page 4 of 22
data sheet adum4151/adum4152/adum4153 electrical character istics 3 .3 v operation all typical specifications are at t a = 25c and v dd1 = v dd2 = 3. 3 v. minimum and maximum spec ifications apply over the entire recommended operation range: 3.0 v v dd1 3.6 v, 3.0 v v dd2 3.6 v, and ? 40c t a + 1 2 5c , unless otherwise noted. switching specifications are tested with c l =15 pf and cmos signal levels , unless otherwise noted . table 4 . switching specifications parameter symbol a grade b grade unit test conditions/comments min typ max min typ max mclk, mo, so spi clock rate spi mclk 1 12.5 mhz data rate fast ( mo, so ) dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 30 20 ns 50 % input to 50% output pulse width pw 100 12.5 ns within pwd limit pulse width distortion pwd 3 3 ns |t plh ? t phl | codirectional channel matching 1 t pskcd 4 2 ns jitter , high speed j hs 1 1 ns mss data rate fast dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 30 30 ns 50% input to 50% output pulse width pw 100 12.5 ns within pwd limit pulse width distortion pwd 3 3 ns |t plh ? t phl | setup time 2 mss setup 1.5 10 ns jitter , low speed j ls 2.5 2.5 ns v ia , v ib , v ic data rate slow dr slow 250 250 kbps wi thin pwd limit propagation delay t phl , t plh 0.1 2.6 0.1 2.6 s 50% input to 50% output pulse width pw 4 4 s within pwd limit jitter, low speed j ls 2.5 2.5 s |t plh ? t phl | v ix 3 minimum input skew 4 t vix skew 3 10 10 ns 1 codirectional channel matching is the absolute value of the difference in propagation delays between any two channels with in puts on the same side of the isolation barrier. 2 the mss signal is glitch filtered in both speed grades, w hereas the other fast signals are not glitch filtered in the b grade. to guarantee that mss reaches the output ahead of another fast signal, set up mss prior to the competing signal by different times depending on speed grade. 3 v ix = v ia , v ib , or v ic . 4 an internal asynchronous clock not available to users samples the low speed signals. if edge sequence in codirectional channe ls is critical to the end application, the leading pulse must be at least 1 t vix skew time ahead of a later pulse to guarantee the correct order or simultaneous arrival at the output. table 5 . supply current device number symbol 1 m hz , a grade/ b grade 17 mhz , b grade unit test conditions /comments min typ max min typ max adum4151 i dd1 3 .8 7 10.5 18 ma c l = 0 pf, low speed channels i dd2 5.1 8 9.0 17 ma c l = 0 pf, low speed channels adum4152 i dd1 3. 7 6.5 11.7 18 ma c l = 0 pf, low speed channels i dd2 5 .2 8 10.0 16 ma c l = 0 pf, low speed channels adum4153 i dd1 3.7 6.5 11.7 18 ma c l = 0 pf, low speed channels i dd2 5.2 9 10.0 15 ma c l = 0 pf , low speed channels rev. a | page 5 of 22
adum4151/adum4152/adum4153 data sheet table 6 . for all models 1, 2, 3 parameter symbol min typ max unit test conditions /comments dc specifications mcl k , mss , mo, so, v ia , v ib , v ic logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v input hysteresis v ihyst 500 mv input current per channel i i ?1 +0.01 +1 a 0 v v input v ddx sclk, sss , mi, si, v oa , v ob , v oc logic high output voltages v oh v ddx ? 0.1 5.0 v i output = ?20 a, v input = v ih v ddx ? 0.4 4.8 v i output = ?4 ma, v input = v ih logic low output voltages v ol 0.0 0.1 v i output = 20 a, v input = v il 0.2 0.4 v i output = 4 ma, v input = v il v dd1 , v dd2 undervoltage lockout uvlo 2.6 v supply current per high speed channel dynamic input supply current i ddi(d) 0.086 ma/mbps dynamic output supply current i ddo(d) 0.019 ma/mbps supply current for all low speed channels quiescent side 1 current i dd1(q) 2.9 ma quiescent side 2 current i dd2q) 4.7 ma ac specifications output rise/fall time t r /t f 2.5 ns 10% to 90% common - mode transient immunity 4 |cm| 25 35 kv/s v input = v dd x , v cm = 1000 v , transient magnitude = 800 v 1 v ddx = v dd1 or v dd2 . 2 v input is the input voltage of any of the mclk, mss , mo, so, v ia , v ib , or v ic pins. 3 i output is the output current of any of the sclk, sss , mi, si, v oa , v ob , or v oc pins. 4 |cm| is the maximum common - mode voltage slew rate that can be sustained while maintaining output voltages within the v oh and v ol limits. the common - mode voltage slew rates apply to both ris ing and falling common - mode voltage edges. rev. a | page 6 of 22
data sheet adum4151/adum4152/adum4153 electri cal characteristics mixed 5 v/3 .3 v operation all typical specifications are at t a = 25c, v dd1 = 5 v, and v dd2 = 3. 3 v. minimum and maximum specifications apply over the entire recommended operation range: 4.5 v v dd1 5.5 v, 3.0 v v dd2 3.6 v , and ? 40 c t a + 1 2 5c , unless otherwise noted. switching specifications are tested with c l =15 pf and cmos signal levels , unless otherwise noted. table 7 . switching specifications parameter symbol a grade b grade unit test conditions /c omments min typ max min typ max mclk, mo, so spi clock rate spi mclk 1 15.6 mhz 1/(4 t phl ) data rate fast (mo, so) dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 27 1 6 ns 50% input to 50% output pulse width pw 100 12.5 ns within pwd limit pulse width distortion pwd 3 3 ns |t plh ? t phl | codirectional channel matching 1 t pskcd 3 2 ns jitter , high speed j hs 1 1 ns mss data rate fast dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 27 26 ns 50% input to 50% output pulse width pw 100 12.5 ns within pwd limit pulse width distortion pwd 3 3 ns |t plh ? t phl | setup time 2 mss setup 1.5 10 ns jitter , high speed j hs 1 1 ns v ia , v ib , v ic data rate slow dr slow 250 250 kbps within pwd limit propagation delay t phl , t plh 0.1 2.6 0.1 2.6 s 50% input to 50% output pulse width pw 4 4 s within pwd limit jitter, low speed j ls 2.5 2.5 s v ix 3 minimum input skew 4 t vix skew 3 1 0 10 ns 1 c odirectional channel matching is the absolute value of the difference in propagation delays between any two channels with inputs on the sa me side of the isolation barrier . 2 the mss signal is glitch filtered in both speed grades, whereas the other fast signals are not glitch filtered in the b grade. to guarantee tha t mss reaches the output ahead of another fast signal, set up mss prior to the competing signa l by different times depending on speed grade. 3 v ix = v ia , v ib , or v ic . 4 an internal asynchronous clock not available to users samples the low speed signals. if edge sequence in codirectional channe ls is critical to the end application, the leading pulse must be at least 1 t vix skew time ahead of a later pulse to guarantee the correct order or simultaneous arrival at the output. table 8 . supply current device number symbol 1 mhz , a grade/ b grade 17 mhz , b grade unit test conditions /comments min typ max min typ max adum4151 i dd1 4.0 8.5 13.9 22 ma c l = 0 pf, low speed channels i dd2 4.6 8 9.0 17 ma c l = 0 pf, low speed channels adum4152 i dd1 4.8 8.5 14.0 21.5 ma c l = 0 pf, low speed channels i dd2 5.0 8 10.0 16 ma c l = 0 pf, low speed channels adum4153 i dd1 4.0 8.5 14.0 22 ma c l = 0 pf, low speed channels i dd2 4.7 9 10.0 15 ma c l = 0 pf, low speed c hannels rev. a | page 7 of 22
adum4151/adum4152/adum4153 data sheet table 9 . for all models 1, 2, 3 parameter symbol min typ max unit test conditions /comments dc specifications mcl k , mss , mo, so, v ia , v ib , v ic logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v input hysteresis v ihyst 500 mv input current per channel i i ?1 +0.01 +1 a 0 v v input v ddx sclk, sss , mi, si, v oa , v ob , v oc logic high output voltages v oh v ddx ? 0.1 5.0 v i output = ?20 a, v input = v ih v ddx ? 0.4 4.8 v i output = ?4 ma, v input = v ih logic low output voltages v o l 0.0 0.1 v i output = 20 a, v input = v il 0.2 0.4 v i output = 4 ma, v input = v il v dd1 , v dd2 undervoltage lockout uvlo 2.6 v supply current for all low speed channels quiescent side 1 current i dd1(q) 4.3 ma quiescent side 2 current i d d2q) 4.7 ma ac specifications output rise/fall time t r /t f 2.5 ns 10% to 90% common - mode transient immunity 4 |cm| 25 35 kv/s v i nput = v ddx , v cm = 1000 v , transient magnitude = 800 v 1 v ddx = v dd1 or v dd2 . 2 v input is the input voltage of any of the mclk, mss , mo, so, v ia , v ib , or v ic pins. 3 i output is the output current of any of the sclk, sss , mi, si, v oa , v ob , v oc pins. 4 |cm| is the maximum common - mode voltage slew rate that can be sustained while maintaining output voltages within the v oh and v ol limits. the common - mode voltage slew rates apply to both rising and falling common - mode voltage edges. rev. a | page 8 of 22
data sheet adum4151/adum4152/adum4153 el ectrical characteris tics mixed 3 .3 v / 5 v operation all typical specifications are at t a = 25c, v dd1 = 3. 3 v, and v dd2 = 5 v . minimum and maximum specifications apply over the entire recommended operation range: 3.0 v v dd1 3.6 v, 4.5 v v dd2 5.5 v , and ? 40c t a + 1 2 5c , unless othe rwise noted. switching specifications are tested with c l =15 pf and cmos signal levels , unless otherwise noted. table 10. switching specifications parameter symbol a grade b grade unit test conditions /comments min typ max min typ max mclk, mo, so spi clock rate spi mclk 1 15.6 mhz data rate fast ( mo, so ) dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 27 1 6 ns 50% input to 50% output pulse width pw 100 12.5 ns within pwd limit puls e width distortion pwd 3 3 ns |t plh ? t phl | codirectional channel matching 1 t pskcd 5 2 ns jitter , high speed j hs 1 1 ns mss data rate fast dr fas t 2 34 mbps within pwd limit propagation delay t phl , t plh 2 7 27 ns 50% input to 50% output pulse width pw 100 12.5 ns within pwd limit pulse width distortion pwd 2 3 ns |t plh ? t phl | setup time 2 mss setup 1.5 10 ns jitter , high speed j hs 1 1 ns v ia , v ib , v ic da ta rate dr slow 250 250 kbps within pwd limit propagation delay t phl , t plh 0.1 2.6 0.1 2.6 s 50% input to 50% output pulse width pw 4 4 s within pwd limit jitter, low speed j ls 2.5 2.5 s |t plh ? t phl | v ix 3 minimum input skew 4 t vix skew 3 10 10 ns 1 c odirectional channel matching is the absolute value of the difference in propagation delays between any two channels with inp uts on the same side of the isolation barrier . 2 the mss signal is glitch filtered in both speed grades, whereas the other fast signals are not glitch filtered in the b grade. to gua rantee that mss reaches the output ahead of another fast signal, it must be set up pr ior to the competing signal by different times depending on speed grade. 3 v ix = v ia , v ib , or v ic . 4 an internal asynchronous clock not available to users samples the low speed signals. if edge sequence in codirectional channels is critic al to the end appl ication, the leading pulse must be at least 1 t vix skew time ahead of a later pulse to guarantee the correct order or simultaneous arrival at the output. table 11. supply current device number symbol 1 mhz , a grade/ b grade 17 mhz , b grade unit test conditions /comments min typ max min typ max adum4151 i dd1 2.8 7 10.5 18 ma c l = 0 pf, low speed channels i dd2 6.0 10.5 13.0 23 ma c l = 0 pf, low speed channels adum 4152 i dd1 3.5 6.5 11.7 18 ma c l = 0 pf, low speed channels i dd2 6.5 10.5 13.4 22.5 ma c l = 0 pf, low speed channels adum4153 i dd1 2.8 6.5 11.7 18 ma c l = 0 pf, low speed channels i dd2 6.0 10. 5 13.4 21 ma c l = 0 pf, low speed channels rev. a | page 9 of 22
adum4151/adum4152/adum4153 data sheet table 12. for all models 1, 2, 3 parameter symbol min typ max unit test conditions /comments dc specifications mcl k , mss , mo, so, v ia , v ib , v ic logic high input threshold v ih 0.7 v ddx v logic low input threshold v il 0.3 v ddx v input hysteresis v ihyst 500 mv input current per channel i i ?1 +0.01 +1 a 0 v v input v ddx sclk, sss , mi, si, v o a , v ob , v oc logic high output voltages v oh v ddx ? 0.1 5.0 v i output = ?20 a, v input = v ih v ddx ? 0.4 4.8 v i output = ?4 ma, v input = v ih logic low output voltages v ol 0.0 0.1 v i output = 20 a, v input = v il 0.2 0.4 v i output = 4 ma, v in put = v il v dd1 , v dd2 undervoltage lockout uvlo 2.6 v supply current for all low speed channels quiescent side 1 current i dd1(q) 2.9 ma quiescent side 2 current i dd2q) 6.1 ma ac specifications output rise/fall time t r /t f 2.5 n s 10% to 90% common - mode transient immunity 4 |cm| 25 35 kv/s v input = v ddx , v cm = 1000 v , transient magnitude = 800 v 1 v ddx = v dd1 or v dd2 . 2 v input is the input voltage of any of the mclk, mss , mo, so , v ia , v ib , v ic pins. 3 i output is the output current of any of the sclk, sss , mi, si, v oa , v ob , v oc pins. 4 |cm| is the maximum common - mode voltage slew rate that can be sustained while maintaining output voltages within the v oh and v ol limits . the common - mode voltage slew rates apply to both rising and falling common - mode voltage edges. package characterist ics table 13. parameter symbol min typ max unit test conditions /comments resistance (i nput to output) 1 r i- o 10 12 ? capacitance (input to output) 1 c i- o 1.0 pf f = 1 mhz input capacitance 2 c i 4.0 pf ic junction to ambient thermal resistance ja 46 c/w thermocouple located at cen ter of package underside 1 the device is considered a 2 - terminal device: pin 1 through pin 10 are shorted together, and pin 11 through pin 20 are shorted together. 2 input capaci tance is from any input data pin to ground. rev. a | page 10 of 22
data sheet adum4151/adum4152/adum4153 regulatory informati on the adum4151 / adum4152 / adum4153 are approved by the organizations listed in table 14. see table 19 and the insulation lifetime section for the recommende d maximum working voltages for specific cross isolation waveforms and insulation levels. table 14. ul cs a vde recognized u nder ul 1577 component recognition program 1 approved under csa component acceptance notice 5a certified acc ording to din v vde v 0884 - 10 (vde v 0884 - 10):2006- 12 2 5000 v rms single protection basic insulation per csa 60950 -1 - 07+a1+a2 and iec 60950 - 12nd ed+a1+a2., 800 v rms (1131 v peak) maximum working voltage 3 reinforced insulation, 849 v peak reinforced in sulation per csa 60950- 1 - 07+a1+a2 and iec 60950 -1 2 nd ed.+a1+a2, 400 v rms (565 v peak) maximum working voltage reinforced insulation (2mopp) per iec 60601 -1 ed.3.1, 250 v rms (353 v peak) maximum working file e214100 file 205078 file 2471900 - 4880 -0 001 1 in accordance with ul 1577, each model is proof t ested by applying an insulation test voltage 6000 v rms for 1 second (current leakage detection limi t = 10 a). 2 in accordance with din v vde v 0884 - 10 , each model is proof tested by applying an insulation test voltage 1590 v peak for 1 second (partial discharge detection limit = 5 pc). the asterisk (*) marked on the component designates din v vde v 0884 - 10 approval. 3 use at working voltages above 400 v ac rms shortens lifetime of the isolator significantly. see table 19 for re commended maximum working voltages under ac and dc conditions. insulation and safet y related specificatio ns table 15. parameter symbol value unit test conditions /comments rated dielectric insulation voltage 5000 v rms 1 - minute duration minimum external air gap (clearance) l(i01) 8.3 mm min measured from input terminals to output terminals, shortest distance through air minimum external tracking (creepage) l(i02) 8.3 mm min measured from input terminals to output terminals, shortest distance path along body minimum internal gap (int ernal clearance) 0.017 mm min insulation distance through insulation tracking resistance (comparative tracking index) cti > 400 v din iec 112/vde 0303 , part 1 material group ii material g roup (din vde 0110, 1/89, table 1) rev. a | page 11 of 22
adum4151/adum4152/adum4153 data sheet din v vde v 08 84 - 10 (vde v 0884 - 10) : 2006 - 12 insulation character istics these isolators are suitable for reinforced electrical isolation only within the safety limit data. maintenance of the safety data is ensured by protective circuits. the asterisk ( * ) marked on packa ges denotes din v vde v 0884 - 10 approval. table 16. description test conditions/comments symbol characteristic unit installation classification per din vde 0110 for rated mains voltage 150 v rms i to iv for rated mains voltage 300 v rms i to iii for rated mains voltage 400 v rms i to ii climatic classification 40/105/21 pollution degree per din vde 0110, table 1 2 maximum working insulati on voltage v iorm 849 v peak input - to - output test voltage, method b1 v iorm 1.875 = v pd(m) , 100% production test, t ini = t m = 1 sec, partial discharge < 5 pc v pd(m) 1592 v peak input - to - output test voltage, method a after environmental tests subgr oup 1 v iorm 1.5 = v pd(m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pc v pd(m) 1274 v peak after input and/or safety test subgroup 2 and subgroup 3 v iorm 1.2 = v pd(m) , t ini = 60 sec, t m = 10 sec, partial discharge < 5 pc v pd(m) 1019 v peak highest allowable overvoltage v iotm 6000 v peak surge isolation voltage v iosm(test) = 10 kv, 1.2 s rise time, 50 s, 50% fall time v iosm 6250 v peak safety limiting values maximum value allowed in the event of a failure (see f igure 4 ) case temperature t s 130 c safety total dissipated power p s 2.4 w insulation resistance at t s v io = 500 v r s >10 9 ? 3.0 2.5 2.0 1.5 1.0 0.5 0 0 50 100 150 safe limiting power (w) ambient temperature (c) 12370-004 figure 4 . thermal derat ing curve, dependence of safety limiting values with case temperature per din v vde v 0884 - 10 recommended operatin g conditions table 17. parameter symbol value operating temper ature range t a ?40c to +125c supply voltage range 1 v dd1 , v dd2 3.0 v to 5.5 v input signal rise and fall times 1.0 ms 1 see the dc correctness and magnetic field immunity section for information on the i mmunity to the external magnetic fields. rev. a | page 12 of 22
data sheet adum4151/adum4152/adum4153 absolute maximum r ating s t a = 25c, unless othe rw ise noted. table 18. parameter rating storage temperatu re (t st ) range ?65c to +150 c ambient operating temperature (t a ) range ?40c to +1 2 5 c supply voltages (v dd1 , v dd2 ) ? 0.5 v to +7.0 v input volta g es (v ia , v ib , v ic , mclk, mo, so, mss ) ?0.5 v to v ddx + 0.5 v output voltages ( sclk, sss , mi, si, v oa , v ob , v oc ) ?0.5 v to v ddx + 0.5 v average current per output pin 1 ?10 ma to +10 ma common - mode transients 2 ?100 kv/ s to +100 kv/ s 1 see figure 4 for maximum safety rated current values across temperature . 2 refers to common - mode transients across the insulation barrier. common - mode transients exceeding the absolute maximum ratings may cause latch - up or permanent damage. stresses at or above those listed under absolute maximum rati ngs may cause permanent damage to the product. this is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. operation beyond the ma ximum operating conditions for extended periods may affect product reliability. table 19 . maximum continuous working voltage 1 parameter value constraint 60 hz ac voltage 400 v rms 20- year lifetime at 0.1% failure rate, zero avera ge voltage dc voltage 1173 v peak limited by the creepage of the package, pollution degree 2, material group ii 2 , 3 1 see the insulation lifetime section for more details. 2 other pollution degree and material group requirements yield a different limit. 3 some system level standards allow components to use the printed wiring board ( pwb ) creepage values. the supported dc voltage may be higher for those standards. esd caution rev. a | page 13 of 22
adum4151/adum4152/adum4153 data sheet pin configurations a nd function descript ions v dd1 1 gnd 1 2 mclk 3 mo 4 20 19 18 17 mi 5 mss 6 v ia 7 16 15 14 v ib 8 13 v oc 9 12 gnd 1 v dd2 gnd 2 sclk si so sss v oa v ob v ic gnd 2 10 11 adum4151 top view (not to scale) 12370-005 figure 5. adum415 1 pin configuration table 20. adum4151 p in function descriptions pin no. mnemonic direction description 1 v dd1 power input powe r supply for isolator side 1. a bypass capacitor from v dd1 to gnd 1 to local ground is required . 2, 10 gnd 1 return ground 1. ground reference for isolator side 1. 3 mc lk clock spi clock from the master controller. 4 mo input spi data from the master to the slave mo / si line. 5 mi output spi data from the slave to the master mi / so line. 6 mss input slave select from the master. this signal uses an act ive low logic. the slave select pin requires a 10 ns setup time from the next clock or data edge. 7 v ia input low speed data input a. 8 v ib input low speed data input b. 9 v oc output low speed data output c. 11, 19 gnd2 return ground 2. ground referenc e for isolator side 2. 12 v ic input low speed data input c. 13 v ob output low speed data output b. 14 v oa output low speed data output a. 15 sss output slave select to the slave. this signal uses an active low logic. 16 so input spi data from the slave to the master mi / so line. 17 si output spi data from the master to the slave mo / si line. 18 sclk output spi clock from the master controller. 20 v dd2 power input power supply for isolator side 2. a bypass capacitor from v dd2 to gnd 2 to local ground is reuired . rev. a | page 14 of 22
data sheet adum4151/adum4152/adum4153 v dd1 1 gnd 1 2 mclk 3 mo 4 20 19 18 17 mi 5 mss 6 v ia 7 16 15 14 v ob 8 13 v oc 9 12 gnd 1 v dd2 gnd 2 sclk si so sss v oa v ib v ic gnd 2 10 1 1 adum4152 top view (not to scale) 12370-006 figure 6. adum4152 pin configuration table 21. adum4152 pin function descriptions pin no. mnemonic direction description 1 v dd1 power input power supply for isolator side 1. a bypass capacitor from v dd1 to gnd 1 to local ground is required. 2 , 10 gnd 1 return ground 1. grou nd reference for isolator side 1. 3 mclk clock spi clock from the master c ontroller . 4 mo input spi data from the master to the slave mo / si l ine . 5 mi output spi data f rom the slave to the m aster mi / so l ine. 6 mss input slave select f rom the master. this signal uses an active low logic. the s lave select pin requires a 10 ns setup time from the next clock or data edge. 7 v ia input low speed data input a. 8 v ob output low speed data output b. 9 v oc output low speed data output c. 11, 19 gnd 2 return ground 2. ground reference for isolator side 2. 12 v ic input low speed data input c. 13 v ib input low speed data input b. 14 v oa output low speed data output a. 15 sss output slave select to the s lave. this signal uses an active low logic. 16 so input spi data f rom the slave to the master mi / so l ine. 17 si output spi data f rom the m aster to the slave mo / si l ine. 18 sclk output spi clock from the master c ontroller . 20 v dd2 power input power supply for isolator side 2 . a bypass capacitor from v dd2 to gnd 2 to local ground is required . rev. a | page 15 of 22
adum4151/adum4152/adum4153 data sheet v dd1 1 gnd 1 2 mclk 3 mo 4 20 19 18 17 mi 5 mss 6 v oa 7 16 15 14 v ob 8 13 v oc 9 12 gnd 1 v dd2 gnd 2 sclk si so sss v ia v ib v ic gnd 2 10 11 adum4153 top view (not to scale) 12370-007 figure 7. adum415 3 pin configuration table 22. adum415 3 pin function descriptions pin no. mnemonic direction description 1 v dd1 power input power supply for isolator side 1. a bypass capacitor from v dd1 to gnd 1 to local ground is required . 2 , 10 gnd 1 return ground 1. ground reference for isolator side 1. 3 mclk clock spi clock from the master c ontroller . 4 mo input spi data from the master to the slave mo / si l ine 5 mi output spi data f rom the slave to the m aster mi / so l ine. 6 mss input slave select from the master. this signal uses an active low logic. the s lave select pin requires a 10 ns setup time from the next clock or data edge. 7 v oa output low speed data output a. 8 v ob output low speed data output b. 9 v oc output low speed data output c. 11, 19 gnd 2 return ground 1. ground reference for isolator side 2. 12 v ic input low speed data input c. 13 v ib input low speed data input b. 14 v ia input low speed data input a. 15 sss output s lave select to the s lave. this signal uses an active low logic. 16 so input spi data f rom the s lave to the m aster mi / so l ine. 17 si output spi data f rom the m aster to the slave mo / si l ine. 18 sclk output spi clock from the master c ontroller . 20 v dd2 po wer input power supply for isolator side 2. a bypass capacitor from v dd2 to gnd 2 to local ground is required . table 23. adum4151 / adum4152 / adum4153 power - off default state truth table (positive logic) 1 v dd1 state v dd2 state side 1 outputs side 2 outputs sss comments unpowered powered z z z outputs on an unpowered side are high imped a nce within one di o de drop of ground powered unpowered z z z outputs on an unpowered side are high imped a nce within one di o de drop of ground 1 z is high impedance. rev. a | page 16 of 22
data sheet adum4151/adum4152/adum4153 typical performanc e characteristics 0 1 2 3 4 5 7 6 0 20 40 60 80 data rate (mbps) 3.3v 5.0v dynamic supply current per input channel (ma) 12370-020 figure 8 . typical dynamic supply current per input channel vs. data rate for 5 .0 v and 3.3 v operation 0 5 10 15 20 25 30 0 20 40 60 80 i dd1 supply current (ma) data rate (mbps) 3.3v 5.0v 12370-022 figure 9 . typical i dd1 supply current vs. data rate for 5.0 v and 3 .3 v ope ration 0 2 4 6 8 10 12 14 16 ?40 10 60 110 propagation delay (ns) ambient temperature (c) 3.3v 5.0v 12370-012 figure 10 . typical propagation delay v s. ambient temperature for high speed channels without glitch filter (see the high speed channels section) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 data rate (mbps) 3.3v 5.0v dynamic supply current per output channel (ma) 12370-021 figure 11 . typical dynamic supply current per output channel vs. data rate for 5 .0 v and 3.3 v operation 0 5 10 15 20 25 0 20 40 60 80 i dd2 supply current (ma) data rate (mbps) 3.3v 5.0v 12370-023 figure 12 . typical i dd2 supply current vs. data rate for 5.0 v and 3 .3 v operation ?40 10 60 110 ambient temperature (c) 3.3v 5.0v 0 5 10 15 20 25 propagation delay (ns) 12370-013 figure 13 . typical propagation delay vs. ambient temperature for high speed channels with glitch filter (see the high speed channels section) rev. a | page 17 of 22
adum4151/adum4152/adum4153 data sheet applications informa tion introduction the adum4151 / adum4152 / adum4153 are a family of devices created to optimiz e is olation of spi for speed an d to provide additional low speed c h annels for control and status monitoring functio ns. the isolators are based on d ifferential signaling i coupler technology for enhanced speed and noise immunity. high speed channels the adum4151 / adum4152 / adum4153 ha ve four high spe ed channels . the first three channels, clk, mi / so, and mo / si (the slash indicates the connection of the particular input and output channel across the isolator) , are optimized for either low propagation delay in the b grade or high noise immunity in the a grade. the difference between the grades is the addition of a glitch filter to these three channels in the a grade version , which increases the propagation delay. the b grade version, with a maximum prop agation delay of 1 4 ns , support s a maximum clock rate of 17 mhz in the standard 4 - wire spi . however , because the glitch filter is not present in the b grade version, en sure that spurious glitches of less than 10 n s are not present. glitches of less than 10 n s in the b grade devices can cause the missing of the second edge of the glitch. th is pulse condition is then seen as a spurious data transition on the output that is corrected by a refresh or the next valid data edge. it is recommended to use the a grade devices in noisy environments. the relationship be tween the spi signal paths and the pin mnemonics of the adum4151 / adum4152 / adum4153 and the data directions is detailed in table 24. table 24 . pin mnemonics correspondence to the spi signal path names spi signal path master side 1 data direction slave side 2 clk mclk the da tapaths are spi mode agnostic. the clk and mo / si spi datapaths are optimized for propagation delay and channel to channel matching. the mi / so s pi datapath is optimized for propagation delay. the device s do not synchronize to the clock channel s ; therefore, there are no constraints on the clock polarity or the timing with respect to the data line s. to allow compatibility with nonstandard spi interf aces, the mi pin is always active, and does not tristate when the slave select is not asserted. this precludes tying several mi line s together without adding a tri sate buffer or multiplexor. ss ( slave select bar ) is typically an active l ow signal. ss can have many dif ferent functio ns in spi and spi like busses. many of these functions are edge triggered ; therefore, the ss path contains a glitch fi lter in both the a grade and the b grade . the glitch filt er prevent s short pulses from propagating to the output or causing other errors in operation . t he mss signal requires a 10 n s setup time in the b grade devices prior to the first active clock edge to allow the added propagation time of th e glitch filter . low speed data channels the low speed data channels are provided as economical isolated datapaths whe re timing is not critical. the dc value of a ll high and low speed inputs on a given side of the device s are sampled simultaneously, packet ized and shifted across an isolation coil. the high speed channels are compared for dc accuracy , and the low speed data is transferred to the appropriate low speed outputs. the process is then reversed by reading the inputs on the opposite side of the devi ces , packetizing them and sending them back for similar processing . the dc correctness data for the high speed channels is handled internally , and the low speed data is clocked to the outputs simultaneously. a free running internal clock regulates t his bid irectional data shuttling . because data is sa m pled at discrete times based on this clock, the propagation del ay for a low speed channel is between 0.1 s and 2.6 s, depending on where the input data edge changes with respect to the internal sample clock. figure 14 illustrates the behavior of the low speed channels and the relationship between the codirectional channels . ? point a: when data is sampled between the input edges of two low speed data inputs, a very narrow gap between e dges is increased to the width of the output clock. ? point b: data edges that occur on codirectional channels between samples are sampled and simultaneously sent to the output s , which synchronize s the data edges between the two channels at the output s. ? poin t c: data pulses that are less than the minimum low speed pulse width may not be transmitted because they may not be sampled. input a output a sample clock output clock b c input b output b a b c a a 12370-014 figure 14 . slow channel timing rev. a | page 18 of 22
data sheet adum4151/adum4152/adum4153 the low speed data system is carefully design ed so that staggered data transitions at the inputs become either synchronized or pushed apart when they are presented at the output. e dge order is always preserved for as long as the edges are separated by at least t vix skew . in o ther words , if one edge is leading another at the i nput, the order of the edges i s not reverse d by the isolator. p rinted circuit board (pcb) layout the adum4151 / adum4152 / adum4153 digital isolator s require no external interface circuitry for the logic interfaces. power supply bypassing is strongly recommended at both the v dd1 and v dd2 supply pins ( see figure 15 ). the capacitor value must be between 0.01 f and 0.1 f. the total lead length between both ends of the capacitor and the input power supply pin must not exceed 20 mm. bypass < 10mm v dd1 gnd 1 mclk mo mi mss v ia /v oa v ib /v ob v dd2 gnd 2 sclk si so sss v oa /v ia v ib /v ob v oc gnd 1 v ic gnd 2 adum4151/ adum4152/ adum4153 12370-015 figure 15 . re commended pcb layout in applications involving high common - mode transients, it is important to minimize board coupling across the isolation barrier. furthermore, design the pcb layout so that any coupling that does occur affects all pins equally on a give n component side. failure to ensure this may cause voltage differentials between pins that exceed the absolute maximum rating s of the device , thereby leading to latch - up or permanent damage. propagation delay related parameters propagation delay is a param eter that describes the time it takes a logic signal to propagate through a component. the input to output propagation delay time for a high to low transition may differ from the propagation delay time of a low to high transition . input output t plh t phl 50% 50% 12370-016 figure 16 . propagation delay parameters pulse width distortion is the maximum difference between these two propagation delay values and an indication of how accurately the timing of the input signal is preserved. channel to channel matching refers to t he maximum amount the propagation delay differs between channels within a single adum4151 / adum4152 / adum4153 component. dc correctness and m agnetic field immunity positive and negative logic transitions at the isolator input cause narrow (~1 ns) pulses to be sent via the transformer to the d ecoder. the decoder is bistable and is, therefore, either set or reset by the pulses indicating input logic transitions. in the absence of logic transitions at the input for more than ~1 .2 s, a periodic set of refresh pulses indicative of the correct inpu t state are sent via the low speed channel to ensure dc correctness at the output. if the low speed decoder receives no pulses for more than about 5 s, the input side is assumed to be unpowered or nonfunctional , in which case, the isolator output is forc ed to a high - z state by the watchdog timer circuit . the limitation on the magnetic field immunity of the device is set by the condition in which induced v oltage in the transformer receiving coil is sufficiently large to either falsely set or reset the deco der. the following analysis defines such conditions. the adum4151 / adum4152 / adum4153 were examined in a 3 v operating condition because it represents the most susceptible mode of operation for this product. the pulses at the transformer output have an amplitude greater than 1.5 v. the decoder has a sensing threshold of about 1.0 v ; th ereby , establishing a 0.5 v margin in which induced voltages can be tolerated. the voltage induced across the receiving coil is given by v = ( ?d/ dt ) r n 2 ; n = 1, 2, , n where: is the magnetic flux density. r n is the radius of the n th turn in the receiving coil. n is the number of turns in the receiving coil. given the geometry of the receiving coil in the adum4151 / adum4152 / adum4153 and an imposed requirement that the induced voltage be, at most, 50% of the 0.5 v margin at the decoder, a maximum allowable magnetic field is calculated as shown in figure 17. magnetic field frequency (hz) maximum allowable magnetic flux density (kgauss) 1k 0.001 100 100m 10 1 0.1 0.01 10k 100k 1m 10m 12370-017 figure 17 . maximum allowable external magnetic flux density rev. a | page 19 of 22
adum4151/adum4152/adum4153 data sheet for example, at a magnetic field frequency of 1 mhz, the maximum allowable magn etic field of 0.5 kgauss , induces a voltage of 0.25 v at the receiving coil. this voltage is about 50% of the sensing threshold and does not cause a faulty output transition. if such an event occurs, with the worst - case polarity, during a transmitted pulse , the interference reduce s the received pulse from >1.0 v to 0.75 v . this voltage is still well above the 0.5 v sensing threshold of the decoder. the preceding magnetic flux density values correspond to specific current magnitudes at given distances away f rom the adum4151 / adum4152 / adum4153 tr ansformers. figure 18 expresses these allowable current magnitudes as a function of frequency for selected distances. the adum4151 / adum4152 / adum4153 are insensitive to external fields. only extremely large, high frequency currents, very close to the component are a concern. for the 1 mhz example noted, plac ing a 1.2 ka current 5 mm away from the adum4151 / adum4152 / adum4153 affect s component operation. magnetic field frequency (hz) maximum allowable current (ka) 1000 100 10 1 0.1 0.01 1k 10k 100m 100k 1m 10m distance = 5mm distance = 1m distance = 100mm 12370-018 figure 18 . maximum allowable current for various current to adum4151 / adum4152 / adum4153 spacings a t combinations of strong magnetic field and high frequency, any loo ps formed by the pcb traces may induce sufficiently large error voltages to trigger the thresholds of succeeding circuitry. take care to avoid pcb structures that form loops. power consumption the supply current at a given channel of the adum4151 / adum4152 / adum4153 isolator s is a function of the supply voltage, the data rate of the channel , and the output load of th e channel and whether it is a high or low speed channel. the low speed channels draw a constant quiescent current caused by the internal ping - pong datapath. the operating frequency is low enough that the capacitive losses caused by the recommended capacitive load are negligible compared to the quiescent current. the explicit calculation for the data rate is eliminated for simplicity, and the quiescent current for each side of the iso lator due to the low speed channels can be found in table 3 , table 6 , table 9 , and table 12 for the particular operating voltages . these quiescent currents add to the high speed current as is shown in the following equations for the total current for each side of the isolator. dynamic currents are taken from table 3 and table 6 for the respective voltages. f or side 1, the supply current is given by i dd1 = i ddi(d) ( f mclk + f mo + f mss ) + f mi ( i ddo(d) + ((0.5 10 ?3 ) c l(mi) v dd1 )) + i dd1(q) for side 2, the supply current is given by i dd2 = i ddi(d) f so + f sclk ( i ddo(d) +((0.5 10 ?3 ) c l(sclk) v dd2 )) + f si ( i ddo(d) +((0.5 10 ?3 ) c l(si) v dd2 )) + f sss ( i ddo(d) +((0.5 10 ?3 ) c l( sss ) v dd2 )) + i dd2(q) where: i ddi(d) , i ddo(d) are the input and output dynamic supply currents per channel (ma/mbps). f x is the logic signal data rate for the specified channel (mbps). c l(x) is the load capacitance of the specified o utput (pf). v ddx is the supply voltage of the side being evaluated (v). i dd1(q) , i dd2(q) are the specified side 1 and side 2 quiescent supply currents (ma). figure 8 and fi gure 11 show the typical supply current per channel as a function of data rate fo r an input and unloaded output. figure 9 and figure 12 show the total i dd1 and i dd2 supply currents as a function of data rate for the adum4151 / adum4152 / adum4153 channel configurations with all high speed channels running at the same speed and the low speed channels at idle . insulation lifetime all insulation structures eventually break down when subjected to voltage stress over a sufficiently long period. the rate of insulation degradation is dependent on the characteristics of the voltage wavefor m applied across the insulation as well as the materials and material interfaces . t wo types of insulation degradation are of primary i nterest : breakdown along surfaces exposed to the air and insulation wear out . surface breakdown is the phenomenon of surface tracking and the primary determinant of surface creepage requirements in system level standards. i nsulation wear out is the phenome non where charge injection or displacement currents inside the insulation material cause long - ter m insulation degradation . rev. a | page 20 of 22
data sheet adum4151/adum4152/adum4153 rev. a | page 21 of 22 surface tracking surface tracking is addressed in electrical safety standards by setting a minimum surface creepage based on the working voltage, the environmental conditions, and the properties of the insulation material. safety agencies perform characterization testing on the surface insulation of components that allow the components to be categorized into different material groups. lower material group ratings are more resistant to surface tracking and, therefore, can provide adequate lifetime with smaller creepage. the minimum creepage for a given working voltage and material group is in each system level standard and is based on the total rms voltage across the isolation, pollution degree, and material group. the material group and creepage for the adum4151 / adum4152 / adum4153 isolators are detailed in table 15. insulation wear out the lifetime of insulation due to wear out is determined by its thickness, the material properties, and the voltage stress applied. it is important to verify that the product lifetime is adequate at the application working voltage. the working voltage supported by an isolator for wear out may not be the same as the working voltage supported for tracking. it is the working voltage applicable to tracking that is specified in most standards. testing and modeling have shown that the primary driver of long-term degradation is displacement current in the polyimide insulation causing incremental damage. the stress on the insulation can be broken down into broad categories, such as dc stress, which causes very little wear out because there is no displacement current, and an ac component time varying voltage stress, which causes wear out. the ratings in certification documents are usually based on 60 hz sinusoidal stress because this stress reflects isolation from line voltage. however, many practical applications have combinations of 60 hz ac and dc across the barrier, as shown in equation 1. because only the ac portion of the stress causes wear out, the equation can be rearranged to solve for the ac rms voltage, as shown in equation 2. for insulation wear out with the polyimide materials used in this product, the ac rms voltage determines the product lifetime. 22 dc rmsac rms vvv ? ? (1) or 22 dc rms rmsac vv v ?? (2) where: v ac rms is the time varying portion of the working voltage. v rms is the total rms working voltage. v dc is the dc offset of the working voltage. calculation and use of parameters example the following is an example that frequently arises in power conversion applications. assume that the line voltage on one side of the isolation is 240 v ac rms, and a 400 v dc bus voltage is present on the other side of the isolation barrier. the isolator material is polyimide. to establish the critical voltages in determining the creepage clearance and lifetime of a device, see figure 19 and the following equations. isolation voltage time v ac rms v rms v dc v peak 12370-019 figure 19. critical voltage example the working voltage across the barrier from equation 1 is 22 dc rmsac rms vvv ? ? 22 400240 ?? rms v v rms = 466 v the 466 v rms is the working voltage used together with the material group and pollution degree when looking up the creepage required by a system standard. to determine if the lifetime is adequate, obtain the time varying portion of the working voltage. the ac rms voltage can be obtained from equation 2. 22 dc rms rmsac vv v ?? 22 400466 ?? rmsac v v ac rms = 240 v in this case, the ac rms voltage is simply the line voltage of 240 v rms. this calculation is more relevant when the waveform is not sinusoidal. the value is compared to the limits for the working voltage listed in table 19 for the expected lifetime, less than a 60 hz sine wave, and it is well within the limit for a 50-year service life. note that the dc working voltage limit in table 19 is set by the creepage of the package as specified in iec 60664-1. this value may differ for specific system level standards
adum4151/adum4152/adum4153 data sheet rev. a | page 22 of 22 outline dimensions 11-15-2011-a 20 11 10 1 seating plane coplanarity 0.1 1.27 bsc 15.40 15.30 15.20 7.60 7.50 7.40 2.64 2.54 2.44 1.01 0.76 0.51 0.30 0.20 0.10 10.51 10.31 10.11 0.46 0.36 2.44 2.24 pin 1 mark 1.93 ref 8 0 0.32 0.23 0.71 0.50 0.31 45 0.25 bsc gage plane compliant to jedec standards ms-013 figure 20. 20-lead standard small outline package, with increased creepage [soic_ic] wide body (ri-20-1) dimension shown in millimeters ordering guide model 1 , 2 , 3 no. of inputs, v dd1 side no. of inputs, v dd2 side maximum data rate (mhz) maximum propagation delay, 5 v (ns) isolation rating (v ac) temperature range package description package option adum4151ariz 5 2 1 25 5000 ?40c to +125c 20-lead soic_ic ri-20-1 adum4151ariz-rl 5 2 1 25 5000 ?40c to +125c 20-lead soic_ic, 13 tape and reel ri-20-1 ADUM4151BRIZ 5 2 17 14 5000 ?40c to +125c 20-lead soic_ic ri-20-1 ADUM4151BRIZ-rl 5 2 17 14 5000 ?40c to +125c 20-lead soic_ic, 13 tape and reel ri-20-1 adum4152ariz 4 3 1 25 5000 ?40c to +125c 20-lead soic_ic ri-20-1 adum4152ariz-rl 4 3 1 25 5000 ?40c to +125c 20-lead soic_ic, 13 tape and reel ri-20-1 adum4152briz 4 3 17 14 5000 ?40c to +125c 20-lead soic_ic ri-20-1 adum4152briz-rl 4 3 17 14 5000 ?40c to +125c 20-lead soic_ic, 13 tape and reel ri-20-1 adum4153ariz 3 4 1 25 5000 ?40c to +125c 20-lead soic_ic ri-20-1 adum4153ariz-rl 3 4 1 25 5000 ?40c to +125c 20-lead soic_ic, 13 tape and reel ri-20-1 adum4153briz 3 4 17 14 5000 ?40c to +125c 20-lead soic_ic ri-20-1 adum4153briz-rl 3 4 17 14 5000 ?40c to +125c 20-lead soic_ic, 13 tape and reel ri-20-1 eval-adum3151z evaluation board 1 z = rohs compliant part. 2 the eval-adum3151z uses a functionally equivalent device for evaluation. the pad layout on the eval-adum3151z board does not support the 20-lead soic_ic package. 3 to evaluate the functionality of the alternative low speed channel configurations of the adum4152 and the adum4153 , the user must purchase an adum3152 or an adum3153 and replace the component on the eval-adum3151z evaluation board. ?2014C2015 analog devices, inc. all rights reserved. trademarks and registered trademarks are the prop erty of their respective owners. d12370-0-3/15(a)


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